세미나
- 2022.03.24
- 580
세미나 제목
Energy-Efficient, Highly Linear, Broadband Power Amplification Using
SiGe HBT BiCMOS Technologies
연사
주인찬 조교수 (아주대 전자공학과)
시간 및 온라인 접속 주소
2022년 4 월
14일 (목) 오후
4:30, 온라인
https://sogang-ac-kr.zoom.us/j/86817255910?pwd=dm0xeUo1S3crTG9HZ3ZpNC9NbGZvdz09
회의 ID: 868 1725 5910
암호: 693530
세미나 초록
The goal of the proposed research is to
develop multiple design methodologies of power amplifiers (PAs) using silicon
germanium (SiGe) heterojunction bipolar junction transistor (HBT) to achieve
highly efficient, high power, highly linear, and/or broadband amplification.
Choosing optimal design method depending upon applications will be critical to
overcome performance limitations imposed by the inherent low bandgap of SiGe
HBT. This work provides several design examples of SiGe HBT PAs and explains
design approaches suitable for each PA application by focusing on unique
features of SiGe HBT devices for the large signal operation and by devising
novel passive and active circuit design techniques.
연사약력
□ 학력
학부 2002-2006 한양대학교 전자전기컴퓨터공학부
석사 2006-2009 서울대학교 전기공학부
박사 2014-2019 Georgia Institute of
Technology 전자전기컴퓨터공학부
□ 경력
2022.03~현재 아주대학교 전자공학과, 조교수
2019.09-2022.02
Qualcomm, Staff Engineer
2019.06-2019.08
Intel Senior, Engineer
2019.01-2019.05
Georgia Institute of Technology, Tech Temp
2017.05-2017.08 Skyworks Solutions, Intern
2016.05-2016.08 Skyworks Solutions, Intern
2012.06-2014.07 삼성전자, 선임
2009.03-2012.04 나노기술원, 연구원